Carbon Nanotube FET Physics Lecture by Marko Radosavljevic of Intel at OGI

September 23 2005

Carbon nanotubes (CNs) are a material system that has created a lot of excitement in the scientific and technology communities for the last decade due to their physical properties. The fact that CNs have extremely good electrical and thermal conductivities as well as high mechanical strength has fostered applications research in variety of industries including: electronics (transistors, interconnects, packaging), display (field emitters), new materials (CN laced composites), medical (cellular probes and drug deliveries), etc.

In this presentation I will focus specifically on semiconducting CNs and try to understand their properties in terms of incorporating them into three terminal, field effect transistor (FET) type geometries. I will discuss some of the device level issues of these materials, including band-gap variability, metallic vs. doped source/drain regions, dielectric scaling and interface properties. In addition, I will discuss how these can be used to tune some of the FET properties in a way that is not possible in conventional Si CMOS.

Speaker Bio

    Marko Radosavljevic of Intel received his PhD specializing in experimental condensed-matter physics from University of Pennsylvania in 2001. During his studies at Penn he received several awards including Chairman’s Teaching Award as best student instructor as well as Elias Burstein Award for best thesis in condensed-matter physics. He went on to a postdoctoral scientist position at IBM T.J. Watson Research Center in the group of Dr. Phaedon Avouris studying physics of field effect transistors (FETs) based on nanoscale materials, including nanotubes and nanowires which garnered him an IBM Invention Achievement Award in 2002. Since 2003 he has been a Senior Device Engineer within Components Research at Intel Corporation working on novel transistor technologies, including non-planar Si transistors, compound semiconductor materials and nanotechnologies. Marko has published over 20 peer reviewed articles and has been awarded in excess of 10 patents. He is a member of Sigma Xi, American Physics Society and Materials Research Society. There is no charge to attend, but registration is required at:
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